Solid lines represent Eq. Such values cannot be attained in semiconductors or non-suspended graphene. Figure 5 Conductivity corresponding to the experimental data of Mayorov et al. Series I Physics Physique Fizika. Approaching ballistic transport in suspended graphene.
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Nat Nanotechnol. Epub Jul Approaching ballistic transport in suspended graphene. Comment in Nat Nanotechnol. The discovery of graphene raises the prospect of a new class of nanoelectronic devices based on the extraordinary physical properties of this one-atom-thick layer of carbon.
Unlike two-dimensional electron layers in semiconductors, where the charge carriers become immobile at low densities, the carrier mobility in graphene can remain high, even when their density vanishes at the Dirac point.
However, when the graphene sample is supported on an insulating substrate, potential fluctuations induce charge puddles that obscure the Dirac point physics. Here we show that the fluctuations are significantly reduced in suspended graphene samples and we report low-temperature mobility approaching , cm2 V-1 s-1 for carrier densities below 5 x cm Such values cannot be attained in semiconductors or non-suspended graphene.
Moreover, unlike graphene samples supported by a substrate, the conductivity of suspended graphene at the Dirac point is strongly dependent on temperature and approaches ballistic values at liquid helium temperatures. At higher temperatures, above K, we observe the onset of thermally induced long-range scattering.
Approaching ballistic transport in suspended graphene.
Approaching ballistic transport in suspended graphene
APPROACHING BALLISTIC TRANSPORT IN SUSPENDED GRAPHENE PDF